Short-circuit oxygen diffusion in thermally grown silica layer
| Autor: | Bojan Gligorijević, Harald Schmidt, Marina Kutin, Aco Janićijević, Nenad Radović, Milorad Davidović |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
Diffusion Oxide 02 engineering and technology 01 natural sciences isotope exchange chemistry.chemical_compound 0103 physical sciences Grain boundary diffusion coefficient Ceramic 010302 applied physics Oxygen diffusion Doping Statistical and Nonlinear Physics 021001 nanoscience & nanotechnology Condensed Matter Physics Amorphous solid Secondary ion mass spectrometry Chemical engineering chemistry grain boundary visual_art visual_art.visual_art_medium cristobalite layer Grain boundary 0210 nano-technology SIMS |
| Zdroj: | International Journal of Modern Physics B |
| Popis: | Amorphous polymer-derived Si - C - N ceramics can be doped with different elements ( Al , B etc.) through various pre-ceramic polymer routes. Thus, controlling of the high temperature oxidation resistance can be achieved on an atomic level. An important factor for silica layer growth is oxygen diffusion in protective thermally grown layers. In order to get insight of the oxygen diffusion mechanism, analysis should include both, bulk and short-circuit diffusion. XRD measurements of oxidized Si - C - N and SiC revealed the possibility that oxide layers were fully crystallized and are composed of nano-sized cristobalite-like grains. Secondary ion mass spectrometry depth profile analysis after 18 O 2-16 O 2 isotope exchange experiments on oxidized SiC indicated that short-circuit diffusion is probably grain boundary diffusion of molecular oxygen. |
| Databáze: | OpenAIRE |
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