The Hall Effect and ionized impurity scattering in Si$_{(1-x)}$Ge$_x$

Autor:	W. Th. Wenckebach, Paul Kinsler
Jazyk:	angličtina
Rok vydání:	2003
Předmět:	Ionized impurity scattering Physics Hall effect Monte Carlo method Condensed Matter (cond-mat) General Physics and Astronomy Order (ring theory) FOS: Physical sciences Condensed Matter Atomic physics
Popis:	Using Monte Carlo simulations, we demonstrate that including ionized impurity scattering in models of Si$_{(1-x)}$Ge$_x$ is vital in order to predict the correct Hall parameters. Our results show good agreement with the experimental data of Joelsson et.al. (JAP, 1997). 5 pages, 4 figures, 3 tables, 2 authors, and a logo. v2 improved referencing
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7cf3098c5d7cb64860a63d5a65e27c04 http://arxiv.org/abs/cond-mat/0309082 Zobrazit plný text záznamu