Atomic scale study of InP etching by Cl(2)-Ar ICP plasma discharge
| Autor: | Ahmed Rhallabi, Marie-Claude Fernandez, J.-P. Landesman, Christophe Cardinaud, R. Chanson |
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| Přispěvatelé: | Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN) |
| Jazyk: | angličtina |
| Rok vydání: | 2011 |
| Předmět: |
Electron density
Physics::Instrumentation and Detectors Monte Carlo method 02 engineering and technology 7. Clean energy 01 natural sciences Atomic units Molecular physics Ion Etching (microfabrication) Physics::Plasma Physics 0103 physical sciences Surface roughness Instrumentation 010302 applied physics Chemistry fungi technology industry and agriculture Plasma 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials Computer Science::Other [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Physical chemistry Inductively coupled plasma 0210 nano-technology |
| Zdroj: | European Physical Journal: Applied Physics European Physical Journal: Applied Physics, EDP Sciences, 2011, 53 (3), pp.33606. ⟨10.1051/epjap/2010100056⟩ |
| ISSN: | 1286-0042 1286-0050 |
| Popis: | International audience; A gas phase kinetic model combined to a 3D atomic etching model have been developed to study the etching process of InP under Cl2-Ar ICP plasma discharge. A gas phase global kinetic model is used to calculate the reactive particle fluxes implied in the etching mechanisms. The 3D atomic InP etching model is based on the Monte Carlo kinetic approach where the plasma surface interactions are described in the probability way. The coupling between the plasma chemistry model and the surface etching model is an interesting approach to predict the etched surface properties in terms of the etch rate, the surface roughness and surface steochiometry as a function of the operating conditions. A satisfactory agreement is obtained by comparing the experimental and the simulation results concerning the evolution of the main plasma discharge parameters such as the electron density and temperature versus the ICP source power for a surface recombination coefficient of atomic chlorine fixed at γ Cl = 0.04. On the other hand, simulation results show the effect of the operating conditions on the etched surface roughness and the etch rate evolutions with time in the early stage. Moreover, the simulation results show the correlation between the decrease of the ion to chlorine flux ratio and the decrease of the RRMS as a function of the pressure. |
| Databáze: | OpenAIRE |
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