Impact of channel orientation on low frequency noise performances of UTBOX nMOSFETs operated at liquid nitrogen temperature
| Autor: | O. Touayar, B. Cretu, Eddy Simoen, B. Nafaa, N. Ismail |
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| Přispěvatelé: | Equipe Electronique - Laboratoire GREYC - UMR6072, Groupe de Recherche en Informatique, Image et Instrumentation de Caen (GREYC), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU), Institut National des Sciences Appliquées et de Technologie - Carthage (INSAT Carthage), IMEC (IMEC), Catholic University of Leuven - Katholieke Universiteit Leuven (KU Leuven) |
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Infrasound Transistor Electrical engineering 02 engineering and technology Liquid nitrogen 021001 nanoscience & nanotechnology 01 natural sciences law.invention 13. Climate action law 0103 physical sciences Optoelectronics Flicker noise Noise level [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics 0210 nano-technology business ComputingMilieux_MISCELLANEOUS |
| Zdroj: | 2017 International Conference on Noise and Fluctuations (ICNF) 2017 International Conference on Noise and Fluctuations (ICNF), Jun 2017, Vilnius, France. ⟨10.1109/ICNF.2017.7985964⟩ |
| Popis: | Low frequency noise is investigated in n-type UTBOX transistors presenting different channel orientations (standard μ100ξ and rotated μ110ξ). It was observed that decreasing temperature reduces the 1/f noise level particularly for a short rotated device. However, unexpected variation of the flicker noise in strong inversion was observed for the long rotated channel. Furthermore, evolution of generation-recombination noise as a function of temperature is investigated to identify traps and evaluate the quality of the Si film. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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