A CAFM and device level study of MIS structures with graphene as interfacial layer for ReRAM applications
| Autor: | Xavier Aymerich, S. Claramunt, A. Ruiz, Montserrat Nafria, Qian Wu, Marc Porti |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
ReRAM Capacitive sensing 02 engineering and technology Dielectric 01 natural sciences law.invention law 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering Nanoscopic scale CAFM 010302 applied physics business.industry Graphene 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials Resistive random-access memory Non-volatile memory Electrode Optoelectronics 0210 nano-technology business Layer (electronics) |
| Zdroj: | Dipòsit Digital de Documents de la UAB Universitat Autònoma de Barcelona |
| Popis: | Capacitive Metal-Insulator-Semiconductor structures with graphene as interfacial layer between the HfO2 dielectric and the top electrode have been fabricated and investigated at device level and at the nanoscale with Conductive Atomic Force Microscope. In particular, their electrical properties and variability have been compared to devices without graphene to evaluate their feasibility as ReRAM devices. At device level, we observe that, when graphene is present as an intercalated layer, several resistive switching cycles can be measured, meanwhile the standard structures without graphene do not show resistive switching behavior. Nanoscale analysis showed that the graphene layer prevents the microstructural irreversible damage of the oxide material during a forming process. Therefore, graphene somehow protects the structure during the CF formation. This protection would explain the observation of RS of the devices with intercalated graphene. |
| Databáze: | OpenAIRE |
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