Static Noise Margin Evaluation Method Based on Direct Polynomial-Curve-Fitting with Universal SRAM Cell Inverter TEG Measurement

Autor:	Kazuyuki Nakamura, Kazunori Noda, Hiroki Koike
Jazyk:	angličtina
Rok vydání:	2009
Předmět:	Polynomial Hardware_MEMORYSTRUCTURES Computer science Transistor Spice Topology law.invention Computer Science::Hardware Architecture Computer Science::Emerging Technologies CMOS law Algebraic operation Curve fitting Electronic engineering Inverter Static random-access memory
Zdroj:	2009 IEEE International Conference on Microelectronic Test Structures (ICMTS).
ISSN:	1071-9032
Popis:	A new method to evaluate the static noise margin (SNM) for leading-edge CMOS SRAM development is proposed. This method includes: (1) direct measurement of the inverter DC transfer curves using a "universal SRAM cell inverter TEG (USCIT)" with arbitrary transistor ratios, (2) curve-fitting of the measured data to polynomial functions in a 45-degree rotated space, and (3) a database of the polynomial coefficients to evaluate and optimize the SNM by a simple algebraic operation. The SNM values obtained using this method are in good agreement with the measured SRAM operations. 2009 IEEE International Conference on Microelectronic Test Structures (ICMTS), 30 March-2 April 2009, Oxnard, CA, USA
Databáze:	OpenAIRE
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