Operando identification of the reversible skin layer on Co3O4 as a three-dimensional reaction zone for oxygen evolution
| Autor: | Tim Wiegmann, Ivan Pacheco, Finn Reikowski, Jochim Stettner, Canrong Qiu, Mathilde Bouvier, Manon Bertram, Firas Faisal, Olaf Brummel, Jörg Libuda, Jakub Drnec, Philippe Allongue, Fouad Maroun, Olaf M. Magnussen |
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| Jazyk: | angličtina |
| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | 'ACS Catalysis ', vol: 12, pages: 3256-3268 (2022) ACS catalysis 12, 3256-3268 (2022). doi:10.1021/acscatal.1c05169 |
| ISSN: | 2155-5435 |
| DOI: | 10.1021/acscatal.1c05169 |
| Popis: | ACS catalysis 12, 3256 - 3268 (2022). doi:10.1021/acscatal.1c05169 Co oxides and oxyhydroxides have been studied extensively in the past as promising electrocatalysts for the oxygen evolution reaction (OER) in neutral to alkaline media. Earlier studies showed the formation of an ultrathin CoO$_x$(OH)$_y$ skin layer on Co$_3$O$_4$ at potentials above 1.15 V vs reversible hydrogen electrode (RHE), but the precise influence of this skin layer on the OER reactivity is still under debate. We present here a systematic study of epitaxial spinel-type Co$_3$O$_4$ films with defined (111) orientation, prepared on different substrates by electrodeposition or physical vapor deposition. The OER overpotential of these samples may vary up to 120 mV, corresponding to two orders of magnitude differences in current density, which cannot be accounted for by differences in the electrochemically active surface area. We demonstrate by a careful analysis of operando surface X-ray diffraction measurements that these differences are clearly correlated with the average thickness of the skin layer. The OER reactivity increases with the amount of formed skin layer, indicating that the entire three-dimensional skin layer is an OER-active interphase. Furthermore, a scaling relationship between the reaction centers in the skin layer and the OER activity is established. It suggests that two lattice sites are involved in the OER mechanism. Published by ACS, Washington, DC |
| Databáze: | OpenAIRE |
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