Role of Trimethylboron to Silane Ratio on the Properties of p-Type Nanocrystalline Silicon Thin Film Deposited by Radio Frequency Plasma Enhanced Chemical Vapour Deposition
Autor: | Hugo Águas, Elvira Fortunato, Sergej Filonovich, I. Bernacka-Wojcik, Rodrigo Martins |
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Rok vydání: | 2010 |
Předmět: |
Amorphous silicon
Materials science Silicon Biomedical Engineering Nanocrystalline silicon Analytical chemistry chemistry.chemical_element Bioengineering General Chemistry Chemical vapor deposition Condensed Matter Physics Silane chemistry.chemical_compound chemistry Plasma-enhanced chemical vapor deposition General Materials Science Electrical measurements Thin film |
Zdroj: | Journal of Nanoscience and Nanotechnology. 10:2547-2551 |
ISSN: | 1533-4899 1533-4880 |
DOI: | 10.1166/jnn.2010.1434 |
Popis: | Trimethylboron (TMB) has been receiving attention as a valid alternative to diborane and methane mixtures for the deposition of p-type silicon films for applications in optoelectronic devices such as solar cells. In this paper we report on p-type hydrogenated nanocrystalline silicon carbide (nc-Si:C:H) films produced by standard 13.56 MHz plasma enhanced chemical vapour deposition technique, using TMB as gas source, under high hydrogen dilution (98%) and using high deposition pressures (3 Torr). The films obtained were characterized by spectroscopic ellipsometry (SE), Raman spectroscopy (RS), and electrical measurements to determine their optical, structural and electrical properties. We achieved conductivities as high as 8.3 (omega cm)(-1), one of the highest values of conductivity published to date using TMB with standard rf-PECVD. Spectroscopic ellipsometry modeling revealed that the films growth mechanism proceeds through a sub-surface layer mechanism that leads to the formation of nanocrystalline silicon. |
Databáze: | OpenAIRE |
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