Design optimization of field-plate assisted RESURF devices
| Autor: | Gerhard Koops, A. Ferrara, Anco Heringa, Peter G. Steeneken, Raymond J. E. Hueting, B. K. Boksteen |
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| Rok vydání: | 2013 |
| Předmět: |
Engineering
Field (physics) business.industry media_common.quotation_subject Silicon on insulator IR-87592 Dielectric Asymmetry DielectricsDopingElectric breakdownJunctionsMathematical modelOptimizationSemiconductor process modeling METIS-297988 Electronic engineering EWI-24483 business media_common |
| Zdroj: | 25th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2013, 237-240 STARTPAGE=237;ENDPAGE=240;TITLE=25th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2013 |
| DOI: | 10.1109/ispsd.2013.6694460 |
| Popis: | A mathematical model for optimizing the 2-D potential distribution in the drift region of field-plate (FP)-assisted RESURF devices (Fig. 1) is presented. The proposed model extends earlier work [1-2] by including top-bottom dielectric asymmetry (typical in SOI devices [3]), non-zero field plate potentials VFP and grading of design parameters other than drift region doping. This generally-applicable, TCAD-verified [4], model provides a guideline for optimizing the drain extension in a wide range of FP-assisted RESURF devices. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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