Phase formations in Co–Silicon system
| Autor: | S. Alberici, Davide Erbetta, T. Marangon, Federico Corni, Rita Tonini, G. Ottaviani |
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| Rok vydání: | 2004 |
| Předmět: |
OXIDE-MEDIATED EPITAXY
inorganic chemicals Amorphous silicon Materials science Silicon COSI2 Nucleation chemistry.chemical_element THIN-FILMS NUCLEATION KINETICS SILICIDES Chemical vapor deposition law.invention chemistry.chemical_compound law Electrical and Electronic Engineering Crystallization Thin film technology industry and agriculture Nanocrystalline silicon Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid Crystallography chemistry Chemical engineering |
| Zdroj: | Microelectronic Engineering. 76:343-348 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2004.07.038 |
| Popis: | Interactions between thin cobalt, 40 nm, and a thick - 250 nm - silicon film were investigated by in situ sheet resistance measurements. Poly and amorphous silicon films, both deposited by CVD, were used. MeV 4He+ Rutherford Backscattering and X-ray diffraction techniques were used to infer the kinds and thicknesses of the compounds formed. Co2Si and CoSi form, on both silicon substrates, in the same way and in substantial consistency with the data reported in literature. The formation of CoSi2 seems to be nucleation controlled on polysilicon, while on amorphous the formation is controlled by diffusion and no nucleation barrier has been detected. The amorphous silicon remains amorphous during the CoSi2 formation, thus suggesting that the model which attributes the absence of a nucleation barrier to silicon crystallization does not hold. |
| Databáze: | OpenAIRE |
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