Ultra-thin high-quality silicon nitride films on Si(111)
| Autor: | Luca Gregoratti, T. Clausen, Th. Schmidt, Sigrid Bernstorff, Jens Falta, Jan Ingo Flege, O. Brunke, M. Kiskinova, Stefan Heun, Subhashis Gangopadhyay |
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| Jazyk: | angličtina |
| Rok vydání: | 2011 |
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| Zdroj: | Europhysics letters 94 (2011): 16003. doi:10.1209/0295-5075/94/16003 info:cnr-pdr/source/autori:Falta, J; Schmidt, T; Gangopadhyay, S; Clausen, T; Brunke, O; Flege, JI; Heun, S; Bernstorff, S; Gregoratti, L; Kiskinova, M/titolo:Ultra-thin high-quality silicon nitride films on Si(111)/doi:10.1209%2F0295-5075%2F94%2F16003/rivista:Europhysics letters (Print)/anno:2011/pagina_da:16003/pagina_a:/intervallo_pagine:16003/volume:94 |
| Popis: | Ultra-thin silicon nitride films grown by exposure of Si(111) substrates to a flux of atomic nitrogen at temperatures between 700 degrees C and 1050 degrees C have been investigated by means of X-ray spectromicroscopy, atomic force microscopy, X-ray reflectivity, and X-ray photoemission spectroscopy. The films show a Si(3)N(4) stoichiometry. For reactive nitride growth at temperatures below 800 degrees C, a smooth surface and interface morphology is found. Higher temperatures lead to the formation of rough films with holes and grooves of increasing size, approaching a lateral size of several hundred nanometers for growth temperatures above 900 degrees C. Nonetheless, X-ray spectromicroscopy shows that the bottom of the holes consists of Si(3)N(4). |
| Databáze: | OpenAIRE |
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