Novel bondpad report process for III-V semiconductor devices using full HSQ properties
| Autor: | J. Chazelas, Marc François, Didier Decoster, Pascal Tilmant, Malek Zegaoui, N. Choueib, Christiane Legrand |
|---|---|
| Přispěvatelé: | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF) |
| Jazyk: | angličtina |
| Rok vydání: | 2009 |
| Předmět: |
Materials science
Passivation business.industry 020208 electrical & electronic engineering 02 engineering and technology Semiconductor device Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials [SPI]Engineering Sciences [physics] 020210 optoelectronics & photonics Resist Etching (microfabrication) Chemical-mechanical planarization 0202 electrical engineering electronic engineering information engineering Optoelectronics Wafer Electrical and Electronic Engineering business Ohmic contact Electron-beam lithography |
| Zdroj: | Microelectronic Engineering Microelectronic Engineering, Elsevier, 2009, 86, pp.68-71. ⟨10.1016/j.mee.2008.09.043⟩ Microelectronic Engineering, 2009, 86 (1), pp.68-71. ⟨10.1016/j.mee.2008.09.043⟩ |
| ISSN: | 0167-9317 1873-5568 |
| DOI: | 10.1016/j.mee.2008.09.043⟩ |
| Popis: | This paper reports on an easy and quick planarization and passivation technique of III-V compound semiconductor compatible with nanoscale devices. Vertical etching requires good sidewalls passivation to reduce drastically the leakage current and to obtain a good planarization of the devices for metal connection. This novel technique offers the capability to planarize all the different compounds in the entire wafer independently of the height of the structure to be connected. This method uses the HSQ properties (fluidity, solidification to silica film by using O"2 plasma treatment, negative tone e-beam lithography resist, low-k dielectric, etc.) to planarize and to passivate all the devices at once. We applied this quick and easy method to InP digital optical switches. We demonstrated photonic switches with high yield (>90%), high breakdown voltage (>30V), low ohmic contact resistance ([email protected]) and a low leakage current (21pA/@mm^2 for 5V reversed bias). |
| Databáze: | OpenAIRE |
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