Electron Microscopy and X‐Ray Diffraction Determinations of Strain Release in InGaAs / GaAs Superlattices Grown by Molecular Beam Epitaxy
| Autor: | M.G. Simeone, C. E. Norman, Laura Lazzarini, M.R. Bruni, Faustino Martelli, Lucia Nasi, Giancarlo Salviati, Claudio Ferrari |
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| Rok vydání: | 1993 |
| Předmět: |
Diffraction
Condensed matter physics Renewable Energy Sustainability and the Environment Chemistry Superlattice Heterojunction Cathodoluminescence Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Crystallography X-ray crystallography Materials Chemistry Electrochemistry Stress relaxation Dislocation Molecular beam epitaxy |
| Zdroj: | Scopus-Elsevier |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.2220836 |
| Popis: | Strain-induced dislocations have been studied in low and medium mismatched (001) oriented In x Ga 1-x As/GaAs superlattice heterostructures. Their optical quality, composition, residual strain, dislocation nature, and location have been studied by x-ray diffraction and electron microscopy techniques. Different predictions of the residual strain have been discussed briefly. All the samples presented perpendicular networks of misfit dislocations with different densities along the [110] and [110] directions. The dislocations were confined inside the buffer layer or at the buffer-superlattice interface without threading the superlattice |
| Databáze: | OpenAIRE |
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