Increasing the performance of a superconducting spin valve using a Heusler alloy
| Autor: | A. A. Validov, A. A. Kamashev, I. A. Garifullin, Joachim Schumann, Vladislav Kataev, Bernd Büchner, Yakov V. Fominov |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Permalloy
spin valve Materials science Letter Spin valve General Physics and Astronomy FOS: Physical sciences 02 engineering and technology lcsh:Chemical technology 01 natural sciences lcsh:Technology Superconductivity (cond-mat.supr-con) Magnetization Condensed Matter::Materials Science superconductor 0103 physical sciences Proximity effect (superconductivity) Nanotechnology General Materials Science lcsh:TP1-1185 Electrical and Electronic Engineering 010306 general physics lcsh:Science Superconductivity Condensed matter physics Spin polarization lcsh:T Condensed Matter - Superconductivity Heterojunction 021001 nanoscience & nanotechnology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect lcsh:QC1-999 Nanoscience Ferromagnetism proximity effect ferromagnet lcsh:Q 0210 nano-technology lcsh:Physics |
| Zdroj: | Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 1764-1769 (2018) Beilstein Journal of Nanotechnology |
| ISSN: | 2190-4286 |
| Popis: | We have studied superconducting properties of spin-valve thin-layer heterostructures CoOx/F1/Cu/F2/Cu/Pb in which the ferromagnetic F1 layer was made of Permalloy while for the F2 layer we have taken a specially prepared film of the Heusler alloy Co2Cr1−xFexAl with a small degree of spin polarization of the conduction band. The heterostructures demonstrate a significant superconducting spin-valve effect, i.e., a complete switching on and off of the superconducting current flowing through the system by manipulating the mutual orientations of the magnetization of the F1 and F2 layers. The magnitude of the effect is doubled in comparison with the previously studied analogous multilayers with the F2 layer made of the strong ferromagnet Fe. Theoretical analysis shows that a drastic enhancement of the switching effect is due to a smaller exchange field in the heterostructure coming from the Heusler film as compared to Fe. This enables to approach an almost ideal theoretical magnitude of the switching in the Heusler-based multilayer with a F2 layer thickness of ca. 1 nm. |
| Databáze: | OpenAIRE |
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