Electroluminescence Mapping of InGaN-based LEDs by SNOM
| Autor: | Yoichi Kawakami, Akio Kaneta, Giichi Marutsuki, Tomotsugu Mitani, Sg. Fujita, Yukio Narukawa, Takashi Mukai, G. Shinomiya |
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| Rok vydání: | 2002 |
| Předmět: |
Materials science
business.industry Electroluminescence Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Wavelength Optics Optical microscope law Optoelectronics Near-field scanning optical microscope Charge carrier business Quantum well Intensity (heat transfer) Light-emitting diode |
| Zdroj: | physica status solidi (a). 192:110-116 |
| ISSN: | 1521-396X 0031-8965 |
| DOI: | 10.1002/1521-396x(200207)192:1<110::aid-pssa110>3.0.co;2-n |
| Popis: | Electroluminescence (EL) mapping has successfully been performed for In x Ga 1-x N single quantum well (SQW)-based light emitting diodes (LEDs) by employing scanning near-field optical microscopy (SNOM) at room temperature. The relative EL intensity fluctuates in the range from 1 to 4 with the spatial scale less than a few hundred nanometers. Clear correlation has been found between EL peak wavelengths and EL intensities where the regions of long wavelength correspond to those of strong EL intensity, suggesting that the injected carriers redistribute toward local potential minima within In x Ga 1-x N SQWs. |
| Databáze: | OpenAIRE |
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