MESFETs on H-terminated polycrystalline diamond
| Autor: | P. CALVANI, F. SINISI, ROSSI, Maria Cristina, D. DOMINIJANNI, E. GIOVINE, E. LIMITI, DOI . ULIS, CONTE, Gennaro |
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| Přispěvatelé: | Calvani, P., Sinisi, F., Rossi, Maria Cristina, Conte, G., Giovine, E., Ciccognani, W., Limiti, E., P., Calvani, F., Sinisi, Conte, Gennaro, D., Dominijanni, E., Giovine, E., Limiti, Ulis, Doi. |
| Jazyk: | angličtina |
| Rok vydání: | 2009 |
| Předmět: |
Materials science
business.industry Transconductance Carbon based electronics Diamond Semiconductor device engineering.material Device technology Electrical characteristics Semiconductor devices Wide band semiconductors Settore ING-INF/01 - Elettronica Cutoff frequency engineering Optoelectronics Microelectronics MESFET Field-effect transistor business Microwave |
| Zdroj: | info:cnr-pdr/source/autori:Calvani, P.; Sinisi, F.; Rossi, M. C.; Conte, G.; Giovine, E.; Ciccognani, W.; Limiti, E./congresso_nome:10th International Conference on ULtimate Integration of Silicon, ULIS 2009/congresso_luogo:/congresso_data:18-20%2F03%2F2009/anno:2009/pagina_da:257/pagina_a:260/intervallo_pagine:257–260 info:cnr-pdr/source/autori:P. Calvani (1), F. Sinisi (1), M.C. Rossi (1), G. Conte (1), E. Giovine (2), W. Ciccognani (3), E. Limiti (3)/congresso_nome:10th International Conference on Ultimate Integration on Silicon/congresso_luogo:Aachen, GERMANY/congresso_data:MAR 18-20, 2009/anno:2009/pagina_da:257/pagina_a:260/intervallo_pagine:257–260 |
| DOI: | 10.1109/ULIS.2009.4897585 |
| Popis: | Metal-Semiconductor Field Effect Transistors (MESFETs) were fabricated on polycrystalline diamond. Devices were realized to be employed in Microwave Integrated Circuits for satellite communications and high frequency power amplification, areas were diamond promise the replacement of vacuum electronics. Fabricated MESFETs typically showed high drain-source current (140 ma/mm) and large transconductance values (50 ms/mm), with a cut off frequency f =10 GHz and a maximum oscillation frequency, f, up to 35 GHz. These values suggest device microwave operation and are obtained through the fabrication of devices with geometry and active region dimensions (200-500 nm gate length) compatible with available microelectronic technologies. ©2009 IEEE. |
| Databáze: | OpenAIRE |
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