Autor: |
K. E. Andersen, Hao Li, C. Stephen Hellberg, D. G. Schlom, V. Vaithyanathan, L. Fitting Kourkoutis, M. K. Parker, David A. Muller |
Rok vydání: |
2007 |
Předmět: |
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Zdroj: |
Physical review letters. 100(3) |
ISSN: |
0031-9007 |
Popis: |
A phase-separation instability, resulting in the dewetting of thin ${\mathrm{SrTiO}}_{3}$ films grown on Si(100) is shown by scanning transmission electron microscopy. Plan-view imaging of 1-nm thick, buried ${\mathrm{SrTiO}}_{3}$ films was achieved by exploiting electron channeling through the substrate to focus the incident 0.2 nm beam down to a 0.04 nm diameter, revealing a nonuniform coverage by epitaxial ${\mathrm{SrTiO}}_{3}$ islands and $2\ifmmode\times\else\texttimes\fi{}1$ Sr-covered regions. Density-functional calculations predict the ground state is a coexistence of $2\ifmmode\times\else\texttimes\fi{}1$ Sr-reconstructed Si and Sr-deficient ${\mathrm{SrTiO}}_{3}$, in correspondence with the observed islanding. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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