InAs/GaAs quantum dot narrow ridge lasers epitaxially grown on SOI substrates for silicon photonic integration
| Autor: | Qi Feng, Ming-Chen Guo, Zihao Wang, Wen-Qi Wei, Jing-Jing Guo, Jian-Huan Wang, Jian-Jun Zhang, Ting Wang |
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| Rok vydání: | 2020 |
| Předmět: |
Silicon photonics
Materials science business.industry Silicon on insulator 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Laser 01 natural sciences Atomic and Molecular Physics and Optics law.invention 010309 optics chemistry.chemical_compound Optics chemistry Quantum dot law 0103 physical sciences Optoelectronics Photonics Indium arsenide 0210 nano-technology business Lasing threshold |
| Zdroj: | Optics express. 28(18) |
| ISSN: | 1094-4087 |
| Popis: | Monolithic integration of III-V laser sources on standard silicon-on-insulator (SOI) substrate has been recognized as an enabling technology for realizing Si-based photonic integration circuits (PICs). The Si-based ridge lasers employing III-V quantum dot (QD) materials are gaining significant momentum as it allows massive-scalable, streamlined fabrication of Si photonic integrated chips to be made cost effectively. Here, we present the successful fabrication of InAs/GaAs QD ridge lasers monolithically grown on {111}-faceted SOI hollow substrates. The as-cleaved Fabry-Perot (FP) narrow ridge laser is achieved with a relatively low threshold current of 50 mA at room temperature under pulse current operation. The maximum working temperature achieved is up to 80 oC. The promising lasing characteristics of such SOI-based InAs/GaAs QD ridge lasers with low threshold current and small footprint provide a viable route towards large-scale, low-cost integration of laser sources on SOI platform for silicon photonic integration purpose. |
| Databáze: | OpenAIRE |
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