Modeling the Displacement Damage on Trigger Current of Anode-Short MOS-Controlled Thyristor
| Autor: | Yu Zhou Wu, Lei Li, Ren Min, Bo Zhang, Xiao Chi Chen, Zehong Li, Yuan Jian, Jin Ping Zhang |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Anode-short MOS-controlled thyristor Materials science 010308 nuclear & particles physics Transistor Thyristor modeling MOS-controlled thyristor Radiation bipolar devices 01 natural sciences Displacement (vector) Electronic Optical and Magnetic Materials law.invention Anode displacement damage law 0103 physical sciences lcsh:Electrical engineering. Electronics. Nuclear engineering Electrical and Electronic Engineering Atomic physics Current (fluid) Current density lcsh:TK1-9971 Biotechnology |
| Zdroj: | IEEE Journal of the Electron Devices Society, Vol 8, Pp 1043-1049 (2020) |
| ISSN: | 2168-6734 |
| Popis: | The MOS-controlled Thyristor (MCT) has been characterized by MOS-gating, high current rise rate, and high blocking capability. The anode short MCT (AS-MCT) is distinguished from conventional MCT by an anode-short structure, which develops a normally-off characteristic. As a composite structure made of metal-oxide-silicon and bipolar junction transistors, AS-MCT is susceptible to displacement damage induced by energetic radiation. The anode trigger current which denotes the latch-up of internal thyristor structure is a key parameter for AS-MCTs. From the aspects of devices physics, we propose a model to describe the displacement damage on trigger current. Our model provides an excellent fit to the experimental data of the AS-MCT samples subjected to fission neutrons with flux in the range of $3.1\times 10^{9}-5.5\times 10^{13}\,\,\mathrm {cm}^{-2}$ . Moreover, this work shows that the high injection effect can alleviate the displacement damage of trigger current following high flux exposures. |
| Databáze: | OpenAIRE |
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