Electronic Energy Levels in High-Temperature Superconductors
| Autor: | H.P. Roeser, M.F. von Schoenermark, J.S. López, M. Stepper, D.T. Haslam, A.S. Nikoghosyan, F.M. Huber |
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| Rok vydání: | 2010 |
| Předmět: |
Superconductivity
Materials science High-temperature superconductivity Condensed matter physics Doping High-temperature superconductor - Superconductor crystal structure - Superconducting current channel - Superconducting unit area Inverse Condensed Matter Physics Critical transition temperature Electronic Optical and Magnetic Materials law.invention Homologous series chemistry.chemical_compound chemistry law Condensed Matter::Superconductivity Condensed Matter::Strongly Correlated Electrons Cuprate Electronic energy |
| Popis: | Parent materials of high-temperature superconductors (HTSC) need to be doped to become superconducting. The optimum doping for maximum critical transition temperature Tc has been analyzed for more than 20 materials. Assuming a uniform doping distribution the distance x between doped unit cells—projected into the CuO2 plane for cuprates—shows a strong linear correlation to the inverse of Tc in the form (2x)2=m11/Tc with a slope of m1=(2.786±0.029)×10−15 m2 K. The mercury cuprate homologous series HgBa2Can−1CunO2n+2+δ with n=1,2,3 has been used to demonstrate the procedure deriving the doping distance x from the optimum doping value δ. |
| Databáze: | OpenAIRE |
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