Field Plate Optimization in Low-Power High-Gain Source-Gated Transistors

Autor:	Nigel D. Young, Radu A. Sporea, S. R. P. Silva, John M. Shannon, Michael J. Trainor
Rok vydání:	2012
Předmět:	Materials science Analogue electronics business.industry Transistor Electronic Optical and Magnetic Materials law.invention Semiconductor law Thin-film transistor Logic gate Optoelectronics Output impedance Electrical and Electronic Engineering business Order of magnitude Voltage
Zdroj:	IEEE Transactions on Electron Devices. 59:2180-2186
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2012.2198823
Popis:	Source-gated transistors (SGTs) have potentially very high output impedance and low saturation voltages, which make them ideal as building blocks for high-performance analog circuits fabricated in thin-film technologies. The quality of saturation is greatly influenced by the design of the field-relief structure incorporated into the source electrode. Starting from measurements on self-aligned polysilicon structures, we show through numerical simulations how the field plate (FP) design can be improved. A simple source FP around 1 μm long situated several tens of nanometers above the semiconductor can increase the low-voltage intrinsic gain by more than two orders of magnitude and offers adequate tolerance to process variations in a moderately scaled thin-film SGT. © 2012 IEEE.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ab1ea5cb3b2fc5ccf38932634a9d35a https://doi.org/10.1109/ted.2012.2198823 Zobrazit plný text záznamu