Control of Alq3 wetting layer thickness via substrate surface functionalization
| Autor: | Shufen Tsoi, Michael J. Brett, Bryan Szeto, M. D. Fleischauer, Jonathan G. C. Veinot |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Oxide Mineralogy Surfaces and Interfaces Substrate (electronics) Chemical vapor deposition Condensed Matter Physics Surface energy chemistry.chemical_compound chemistry Chemical engineering Electrochemistry Surface modification Deposition (phase transition) General Materials Science Wetting Spectroscopy Wetting layer |
| Zdroj: | Langmuir : the ACS journal of surfaces and colloids. 23(12) |
| ISSN: | 0743-7463 |
| Popis: | The effects of substrate surface energy and vapor deposition rate on the initial growth of porous columnar tris(8-hydroxyquinoline)aluminum (Alq3) nanostructures were investigated. Alq3 nanostructures thermally evaporated onto as-supplied Si substrates bearing an oxide were observed to form a solid wetting layer, likely caused by an interfacial energy mismatch between the substrate and Alq3. Wetting layer thickness control is important for potential optoelectronic applications. A dramatic decrease in wetting layer thickness was achieved by depositing Alq3 onto alkyltrichlorosilane-derivatized Si/oxide substrates. Similar effects were noted with increasing deposition rates. These two effects enable tailoring of the wetting layer thickness. |
| Databáze: | OpenAIRE |
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