Effect of HfO2 Crystallinity on Device Characteristics and Reliability for ReRAM

Autor:	M. S. Joo, J. S. Roh, W. G. Kim, S. J. Kim, T. O. Youn, S. K. Park, Ja-Yong Kim, J.N. Kim, J. H. Yoo
Rok vydání:	2011
Předmět:	Crystallinity Materials science Reliability (statistics) Reliability engineering Resistive random-access memory
Zdroj:	ECS Transactions. 35:245-248
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.3568866
Popis:	It has been investigated HfO2 crystallinity depending on the crystallinity of under layer electrode material and its effect on device characteristics and reliability for ReRAM. HfO2 on TiN electrode, which has a polycrystalline structure, shows the degradation of resistive switching characteristics possibly due to the local crystallization of HfO2 on the crystallized TiN. On the contrary, HfO2 on TiAlN electrode, which has an amorphous structure, shows the excellent switching and endurance characteristics owing to control the crystallization of HfO2.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7a756997821c23d2188bc2310eff562c https://doi.org/10.1149/1.3568866 Zobrazit plný text záznamu