Intrinsic photoconductivity in chromium disilicide epitaxial thin films
| Autor: | N. G. Galkin, A. M. Maslov, A. V. Konchenko |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Range (particle radiation)
Materials science Silicon business.industry Photoconductivity Epitaxial thin film chemistry.chemical_element Photon energy Condensed Matter Physics Epitaxy Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Absorption edge chemistry Optoelectronics business Chromium disilicide |
| Zdroj: | Scopus-Elsevier |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/1.1187262 |
| Popis: | Spectral and integrated photoconductivities in chromium-disilicide epitaxial films grown on single-layer silicon substrates have been studied in the photon energy range 0.5–1.6 eV. The region of the photoconductivity maximum observed at 1.23 eV corresponds to the third direct interband transition in chromium disilicide at 0.9–0.95 eV. Possible reasons for the weak photoconductivity signal in the region of the fundamental absorption edge are analyzed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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