| Autor: |
Lin Liu, Jun-Feng Wang, Xiao-Di Liu, Hai-An Xu, Jin-Ming Cui, Qiang Li, Ji-Yang Zhou, Wu-Xi Lin, Zhen-Xuan He, Wan Xu, Yu Wei, Zheng-Hao Liu, Pu Wang, Zhi-He Hao, Jun-Feng Ding, Hai-Ou Li, Wen Liu, Hao Li, Lixing You, Jin-Shi Xu, Eugene Gregoryanz, Chuan-Feng Li, Guang-Can Guo |
| Rok vydání: |
2022 |
| Předmět: |
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| Zdroj: |
Nano letters. 22(24) |
| ISSN: |
1530-6992 |
| Popis: |
Spin defects in silicon carbide appear to be a promising tool for various quantum technologies, especially for quantum sensing. However, this technique has been used only at ambient pressure until now. Here, by combining this technique with diamond anvil cell, we systematically study the optical and spin properties of divacancy defects created at the surface of SiC at pressures up to 40 GPa. The zero-field-splitting of the divacancy spins increases linearly with pressure with a slope of 25.1 MHz/GPa, which is almost two-times larger than that of nitrogen-vacancy centers in diamond. The corresponding pressure sensing sensitivity is about 0.28 MPa/Hz |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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