Electrical characterization of Au/n-Si (MS) diode with and without graphene-polyvinylpyrrolidone (Gr-PVP) interface layer
| Autor: | Adem Tataroğlu, Şemsettin Altındal, Yashar Azizian-Kalandaragh |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Nanocomposite Graphene Diffusion Analytical chemistry Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Depletion region law 0103 physical sciences Wafer Electrical and Electronic Engineering Ohmic contact Layer (electronics) Diode |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 32:3451-3459 |
| ISSN: | 1573-482X 0957-4522 |
| Popis: | In this research, for determining the effects of the (Gr-PVP) interfacial layer, two types of diodes (Au/n-Si and Au/(Gr-PVP)/n-Si) were performed on the same n-Si wafer with the same ohmic and rectifier contacts. Graphene-doped PVP nanocomposite film was grown on the n-Si wafer by a spin-coating method. Therefore, the basic electrical parameters of them were extracted from the I-V and Z-V-f characteristics and compared in detail. The higher values of n and lower values of BH obtained from Cheung's functions compared to TE theory were ascribed to their voltage-dependent. The frequency-dependent diffusion potential (V-D), doping-donor atoms (N-D), depletion layer width (W-D), surface potential (psi(s)), R-s, and BH values of the MPS diode were also extracted from the impedance characteristics in the frequency range of 10-10(3) kHz. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink