InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm
| Autor: | Sanna Ranta, Mircea Guina, Daniele C. Parrotta, P. H. Moriya, Jennifer E. Hastie, George A. Chappell, Hermann Kahle, Riccardo Casula |
|---|---|
| Přispěvatelé: | Tampere University, Physics |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Relative intensity noise chemistry.chemical_element 02 engineering and technology 114 Physical sciences 01 natural sciences law.invention Semiconductor laser theory Longitudinal mode 010309 optics QC350 Resonator Laser linewidth Optics law 0103 physical sciences Diode Strontium business.industry dBc Spectral density 021001 nanoscience & nanotechnology Laser Atomic and Molecular Physics and Optics Low noise chemistry Optoelectronics 0210 nano-technology business |
| Zdroj: | Frontiers in Optics / Laser Science. |
| ISSN: | 1094-4087 |
| Popis: | We report the design, growth, and characterization of an AlGaInP-based VECSEL, designed to be optically-pumped with an inexpensive high power blue InGaN diode laser, for emission around 689 nm. Up to 140 mW output power is achieved in a circularly-symmetric single transverse (TEM00) and single longitudinal mode, tunable from 683 to 693 nm. With intensity stabilization of the pump diode and frequency-stabilization of the VECSEL resonator to a reference cavity via the Pound-Drever-Hall technique, we measure the power spectral density of the VECSEL frequency noise, reporting sub-kHz linewidth at 689 nm. The VECSEL relative intensity noise (RIN) is |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|