Field-Effect Transistors Using Silicon Nanowires Prepared by Electroless Chemical Etching
| Autor: | Zahid A. K. Durrani, M Zaremba-Tymieniecki, Chuanbo Li, Kristel Fobelets |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
Silicon business.industry Nanowire chemistry.chemical_element Nanotechnology Isotropic etching Electronic Optical and Magnetic Materials Threshold voltage Nanoelectronics chemistry Etching (microfabrication) MOSFET Optoelectronics Field-effect transistor Electrical and Electronic Engineering business |
| Zdroj: | IEEE Electron Device Letters. 31:860-862 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | Silicon nanowires, prepared by electroless chemical etching, are used to fabricate dual-gate field-effect transistors. The diameters of the nanowires vary from 40–300 nm, with a maximum aspect ratio of ˜3000. Titanium silicide contacts are fabricated on single nanowires. An aluminium top-gate, combined with a back-gate, forms a dual-gate transistor. In an n-channel device with a nanowire diameter of ˜70 nm, the output characteristics show current saturation, with a maximum current of ˜100 nA. A drain-source threshold voltage exists for current flow, controlled by the gate voltage, and assists in device turn-off. The ON/OFF current ratio is ˜3000, and the subthreshold swing is ˜780 mV/decade. |
| Databáze: | OpenAIRE |
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