| Autor: |
A. Bouziane, Hind Jaafar, Abdellah Aouaj, Benjamin Iniguez |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
International Journal of Reconfigurable and Embedded Systems (IJRES). 9:34 |
| ISSN: |
2089-4864 |
| DOI: |
10.11591/ijres.v9.i1.pp34-41 |
| Popis: |
A compact model for dual-material gate graded-channel and dual-oxidethickness with two dielectric constant different cylindrical gate (DMG-GC-DOTTDCD) MOSFET was investigated in terms of transconductance, drainconductance and capacitance. Short channel effects are modeled with simpleexpressions, and incorporated into the core of the model (at the draincurrent). The design effectiveness of DMG-GC-DOTTDCD was monitoredin comparing with the DMG-GC-DOT transistor, the effect of variations oftechnology parameters, was presented in terms of gate polarization and drainpolarization. The results indicate that the DMG-GC-DOTTDCD deviceshave characteristics higher than the DMG-GC-DOT MOSFET. To validatethe proposed model, we used the results obtained from the simulation of thedevice with the SILVACO-ATLAS-TCAD software. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
