Recombination activity of threading dislocations in GaInP influenced by growth temperature
| Autor: | Gareth G.E. Seward, Patrick G. Callahan, C. H. Reilly, Kunal Mukherjee |
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| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics General Physics and Astronomy Cathodoluminescence 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Crystallographic defect Mathematical Sciences Engineering 0103 physical sciences Physical Sciences Light emission Diffusion (business) Dislocation 0210 nano-technology Burgers vector Quantum well Recombination Applied Physics |
| Zdroj: | Mukherjee, K; Reilly, CH; Callahan, PG; & Seward, GGE. (2018). Recombination activity of threading dislocations in GaInP influenced by growth temperature. JOURNAL OF APPLIED PHYSICS, 123(16). doi: 10.1063/1.5018849. UC Santa Barbara: Retrieved from: http://www.escholarship.org/uc/item/1pn062b1 JOURNAL OF APPLIED PHYSICS, vol 123, iss 16 Journal of Applied Physics, vol 123, iss 16 |
| DOI: | 10.1063/1.5018849. |
| Popis: | Room-temperature non-radiative recombination is studied at single dislocations in Ga0.5In0.5P quantum wells grown on metamorphic templates using cathodoluminescence and electron channeling contrast imaging. An analysis of the light emission intensity profiles around single dislocations reveals that the average recombination strength of a dislocation decreases by a factor of four and seven as a result of decreasing growth temperature of the GaInP quantum well from 725 to 675 and 625 °C, respectively. This reduction occurs despite little change in the diffusion length, precluding the prospect of inducing carrier localization by ordering and phase separation in GaInP at lower growth temperatures. These observations are rationalized by the premise that point defects or impurities are largely responsible for the recombination activity of dislocations, and the extent of decoration of the dislocation core decreases with temperature. Preliminary evidence for the impact of the Burgers vector is also presented. The lowest growth temperature, however, negatively impacts light emission away from dislocations. Carrier recombination in the bulk and at dislocations needs to be considered together for metamorphic devices, and this work can lead to new techniques to limit non-radiative recombination. |
| Databáze: | OpenAIRE |
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