Ultra-Low Power Scaled III-V-on-Si 1T-DRAMs With Quantum Well Heterostructures
| Autor: | Lukas Czornomaz, Siegfried Karg, Cezar B. Zota, L. Vergano, C. Convertino |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Hardware_MEMORYSTRUCTURES Materials science business.industry Heterojunction 02 engineering and technology Energy consumption 021001 nanoscience & nanotechnology 01 natural sciences Memory management Low-power electronics 0103 physical sciences Optoelectronics Spontaneous emission 0210 nano-technology business Quantum well Dram Floating body effect |
| Zdroj: | 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) |
| DOI: | 10.1109/eurosoi-ulis49407.2020.9365288 |
| Popis: | We demonstrate 1T-DRAMs based on the floating body effect in InGaAs-on-Si FETs. Using optimized quantum well channel heterostructures, retention times are enhanced and overall energy consumption is strongly reduced, resulting in the lowest write and read energies for IT-DRAMs - together with an extremely scaled gate length of 14 nm. Two different channel heterostructures are explored with regards to their impact on memory operation, energy consumption and endurance. The high electron mobility of the channel material enables a refresh power consumption of only 3.9 pW, the lowest reported for a 1T memory and matching state of the art 1T1C DRAM cells. These devices are highly promising for embedded memory applications in III-V high-frequency and future high-performance logic node technologies. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|