Valence band splitting in wurtzite InGaAs nanoneedles studied by photoluminescence excitation spectroscopy
| Autor: | Gerhard Abstreiter, Wai Son Ko, Xiaodong Wang, D. Spirkoska, Connie J. Chang-Hasnain, Ilaria Zardo, Sara Yazji, Jonathan J. Finley, Kar Wei Ng |
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| Přispěvatelé: | Photonics and Semiconductor Nanophysics |
| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: |
Materials science
Band gap band structure Physics::Optics General Physics and Astronomy chemistry.chemical_element 7. Clean energy Molecular physics Condensed Matter::Materials Science symbols.namesake Stokes shift InGaAs nanoneedle General Materials Science Photoluminescence excitation Nuclear Experiment Electronic band structure Spectroscopy Wurtzite crystal structure Condensed Matter::Other business.industry General Engineering photoluminescence excitation spectroscopy Condensed Matter::Mesoscopic Systems and Quantum Hall Effect chemistry wurtzite Raman spectroscopy symbols Optoelectronics business Indium |
| Zdroj: | ACS Nano, 8(11), 11440-11446. American Chemical Society |
| ISSN: | 1936-086X 1936-0851 |
| Popis: | We use low-temperature microphotoluminescence and photoluminescence excitation spectroscopy to measure the valence band parameters of single wurtzite InGaAs nanoneedles. The effective indium composition is measured by means of polarization-dependent Raman spectroscopy. We find that the heavy-hole and light-hole splitting is ∼95 meV at 10 K and the Stokes shift is in the range of 35–55 meV. These findings provide important insight in the band structure of wurtzite InGaAs that could be used for future bandgap engineering. |
| Databáze: | OpenAIRE |
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