Chemical characterization of III–V heterostructures in 3D architecture
| Autor: | Thierry Baron, Franck Bassani, G. Audoit, V. Gorbenko, Mickael Martin, R. Cipro, S. David, Adeline Grenier, Jean-Paul Barnes, Xinyu Bao |
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| Přispěvatelé: | Laboratoire des technologies de la microélectronique (LTM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2015 |
| Předmět: |
Chemical imaging
Materials science Analytical chemistry High resolution 02 engineering and technology Lateral resolution Atom probe 01 natural sciences law.invention law 0103 physical sciences Electrical and Electronic Engineering Chemical composition ComputingMilieux_MISCELLANEOUS [PHYS]Physics [physics] 010302 applied physics business.industry Heterojunction 021001 nanoscience & nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Characterization (materials science) Secondary ion mass spectrometry Optoelectronics 0210 nano-technology business |
| Zdroj: | Microelectronic Engineering Microelectronic Engineering, Elsevier, 2015, 147, pp.219-222. ⟨10.1016/j.mee.2015.04.107⟩ Microelectronic Engineering, 2015, 147, pp.219-222. ⟨10.1016/j.mee.2015.04.107⟩ |
| ISSN: | 0167-9317 1873-5568 |
| DOI: | 10.1016/j.mee.2015.04.107 |
| Popis: | Display Omitted Uniform III-V heterostructures selectively grown on non-planar 300mm Si substrate were studied using SIMS.SIMS protocols were developed to obtain 2D depth profiles of III-V materials in 3D architectures.3D reconstructions of individual confined InGaAs layers were obtained using ToF-SIMS and atom-probe. Future nanoelectronic devices will integrate ultra-thin multilayers of various materials in 3D architecture. The depth and lateral resolution become critical for the analysis of the chemical composition of such materials. 2D composition depth profiling with high resolution for arrays of III-V trenches has been studied using magnetic sector secondary ion mass spectrometry. The averaged SIMS profiles were compared with 3D reconstructions of individual trenches containing confined InGaAs layers using higher spatial techniques: time-of-flight secondary ion mass spectrometry and atom probe tomography. |
| Databáze: | OpenAIRE |
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