Surface ionizing dose for space applications estimated with low energy spectra going down to hundreds of eV
Autor: | Angélica Sicard, Quentin Gibaru, Nicolas Balcon, Robert Ecoffet, P. Caron, Christophe Inguimbert |
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Přispěvatelé: | ONERA / DPHY, Université de Toulouse [Toulouse], ONERA-PRES Université de Toulouse, Centre National d'Études Spatiales [Toulouse] (CNES) |
Jazyk: | angličtina |
Rok vydání: | 2021 |
Předmět: |
Nuclear and High Energy Physics
Physics::Instrumentation and Detectors Monte Carlo method Physics::Medical Physics Electronvolt 02 engineering and technology Electron Radiation 7. Clean energy 01 natural sciences Spectral line Ionizing radiation [SPI]Engineering Sciences [physics] 0103 physical sciences Electrical and Electronic Engineering 010302 applied physics Physics [PHYS]Physics [physics] 021001 nanoscience & nanotechnology Computational physics Nuclear Energy and Engineering 13. Climate action Geostationary orbit Proton Total ionizing dose 0210 nano-technology Space Environment Dose depth profile Space environment |
Zdroj: | IEEE Transactions on Nuclear Science IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2021, 68 (8), pp.1754-1763. ⟨10.1109/TNS.2020.3045200⟩ |
ISSN: | 0018-9499 |
DOI: | 10.1109/TNS.2020.3045200⟩ |
Popis: | International audience; The contribution of low-energy particles down to ~200 eV to the dose deposited on the very near surface of materials subject to the space environment is investigated by means of GEANT4 Monte Carlo simulations. The contribution to the dose, of the low-energy parts of Global Radiation Earth ENvironment (GREEN) spectra (200 eV–40 keV for electrons, 200 eV–100 keV for protons), is compared with calculations performed with AE8/AP8. Both geostationary earth orbit (GEO) and low earth orbit (LEO) SPOT like orbits are studied. The dose depth profiles are estimated for silicon material. The impact on the dose calculation of different transport models is also investigated. Below 1 keV, the relevance of continuous processes is analyzed for electrons by comparison with a discrete model [GEANT4/microelectronic (MICROELEC)]. This analysis is also performed for protons below 10 keV. |
Databáze: | OpenAIRE |
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