Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure
| Autor: | Markus Andreas Schubert, Tore Niermann, Fariba Hatami, Grzegorz Lupina, Emad H. Hussein, Peter Zaumseil, William Ted Masselink, Gang Niu, Antonio Di Bartolomeo, Thomas Schroeder, H. M. Krause, Ya-Hong Xie, Oliver Skibitzki, Michael Lehmann, Giovanni Capellini |
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| Přispěvatelé: | Niu, Gang, Capellini, Giovanni, Hatami, Fariba, Di Bartolomeo, Antonio, Niermann, Tore, Hussein, Emad Hameed, Schubert, Markus Andrea, Krause, Hans Michael, Zaumseil, Peter, Skibitzki, Oliver, Lupina, Grzegorz, Masselink, William Ted, Lehmann, Michael, Xie, Ya Hong, Schroeder, Thomas |
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Silicon chemistry.chemical_element Nanotechnology 02 engineering and technology Photodetection rectification Epitaxy 01 natural sciences law.invention monolithic integration Rectification law 0103 physical sciences General Materials Science 010302 applied physics graphene III-V compounds nanoheteroepitaxy Materials Science (all) Graphene business.industry Transistor Heterojunction III-V compound 021001 nanoscience & nanotechnology chemistry Optoelectronics Photonics 0210 nano-technology business |
| Zdroj: | ACS applied materialsinterfaces. 8(40) |
| ISSN: | 1944-8252 |
| Popis: | The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a central topic in (opto-)electronics owing to device applications. InP could open new avenues for the realization of novel devices such as high-mobility transistors in next-generation CMOS or efficient lasers in Si photonics circuitry. However, the InP/Si heteroepitaxy is highly challenging due to the lattice (∼8%), thermal expansion mismatch (∼84%), and the different lattice symmetries. Here, we demonstrate the growth of InP nanocrystals showing high structural quality and excellent optoelectronic properties on Si. Our CMOS-compatible innovative approach exploits the selective epitaxy of InP nanocrystals on Si nanometric seeds obtained by the opening of lattice-arranged Si nanotips embedded in a SiO2 matrix. A graphene/InP/Si-tip heterostructure was realized on obtained materials, revealing rectifying behavior and promising photodetection. This work presents a significant advance toward the monolithic integration of graphene/III-V based hybrid devices onto the mainstream Si technology platform. |
| Databáze: | OpenAIRE |
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