Method Of Fast Hydrogen Passivation To Solar Cell Made Of Crystalline Silicon
| Autor: | Wen-Ching Sun, Jian-Hong Lin, Wei-Lun Chang, Tien-Heng Huang, Chih-Wei Wang, Jia-De Lin, Chwung-Shan Kou, Jian-You Lin, Sheng-Wei Chen, Jenn-Chang Hwang, Jon-Yiew Gan |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
Silicon business.industry chemistry.chemical_element engineering.material Quantum dot solar cell Copper indium gallium selenide solar cells Polymer solar cell Monocrystalline silicon Polycrystalline silicon chemistry engineering Optoelectronics Plasmonic solar cell Crystalline silicon business |
| Zdroj: | Materials Research Society Symposium Proceedings. |
| Popis: | Plasma immersion ion implantation (PIII) is a technique of material processing and surface modification, using controllable negative high voltage pulsed bias to attract the ion generated from the plasma. The method using PIII treatment quickly improves the performance of solar cell made of crystalline silicon, including monocrystalline, multicrystalline and polycrystalline silicon. Hydrogen ions are attracted and quickly implanted into solar cell under a predetermined negative pulse voltage, thus, the passivation of the crystal defects of the solar cell can be realized in a short period. Meanwhile, the properties of the antireflection layer can not be damaged as the proper operating conditions are used. Consequently, the series resistance can be significantly reduced and the filling factor increases as a result. Both the short-circuit and the open-circuit voltage can be increased. The efficiency can be enhanced. |
| Databáze: | OpenAIRE |
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