Lanthanide impurities in wide bandgap semiconductors: a possible roadmap for spintronic devices
Autor: | Lucy V. C. Assali, Wanda V. M. Machado, João F. Justo, G. Caroena |
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Jazyk: | angličtina |
Rok vydání: | 2013 |
Předmět: |
Lanthanide
Condensed Matter - Materials Science Materials science Physics and Astronomy (miscellaneous) Spintronics business.industry Band gap Doping Wide-bandgap semiconductor Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences Gallium nitride chemistry.chemical_compound Condensed Matter::Materials Science chemistry SPINTRÔNICA Phenomenological model Optoelectronics Condensed Matter::Strongly Correlated Electrons business Wurtzite crystal structure |
Zdroj: | Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual) Universidade de São Paulo (USP) instacron:USP |
Popis: | The electronic properties of lanthanide (from Eu to Tm) impurities in wurtzite gallium nitride and zinc oxide were investigated by first principles calculations, using an all electron methodology plus a Hubbard potential correction. The results indicated that the 4f-related energy levels remain outside the bandgap in both materials, in good agreement with a recent phenomenological model, based on experimental data. Additionally, zinc oxide doped with lanthanide impurities became an n-type material, showing a coupling between the 4f-related spin polarized states and the carriers. This coupling may generate spin polarized currents, which could lead to applications in spintronic devices. 11 pages, 3 figures |
Databáze: | OpenAIRE |
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