Sub-electron noise measurements on repetitive non-destructive readout devices
| Autor: | Sven Herrmann, Lothar Strüder, Johannes Treis, Gerhard Lutz, S. Wolfel, Peter Lechner, Rainer Richter, Matteo Porro |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Physics
Nuclear and High Energy Physics Physics::Instrumentation and Detectors business.industry Detector White noise Electron RNDR Active pixel sensor DEPFET Spectroscopy Sub-electron noise Settore ING-INF/01 - Elettronica Signal Noise (electronics) Optics Transfer (computing) Non destructive Silicon detector business Instrumentation |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 566:536-539 |
| ISSN: | 0168-9002 |
| DOI: | 10.1016/j.nima.2006.06.060 |
| Popis: | We demonstrate the use of a silicon detector based on a DEPFET device, with sub-electron readout noise ( 0.6 e - ENC). The so-called repetitive non-destructive readout (RNDR) detector was realised by putting two single DEPFETs next to each other, and connecting their charge storing region by an additional gate. By every transfer from gate 1 to 2 and vice versa the signal charge can be measured non-destructively. By taking the average value of a large number ( n ) of these measurements the serial noise is reduced by 1 / n . This way of readout does not only reduce the white noise, but also averages out the 1 / f noise. Because the whole readout time is n times longer than the time for one readout, the device is interesting for low-noise and low-flux applications. The main advantage of such a detector is the ability to reduce the influence of 1 / f noise to the readout noise. The theoretically and experimentally achievable resolution for different operating parameters (leakage current, readout noise, number and duration of readouts) were investigated by Monte-Carlo simulations and measured on single pixel RNDR devices. |
| Databáze: | OpenAIRE |
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