Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density
| Autor: | Ryo Tanaka, Mutsumi Kimura, Mamoru Furuta, Tokiyoshi Matsuda, Daichi Koretomo, Ayata Kurasaki, Yusaku Magari, Sumio Sugisaki |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Fabrication
Materials science thin-film device oxygen density chemistry.chemical_element 02 engineering and technology lcsh:Technology 01 natural sciences Oxygen Article Protein filament 0103 physical sciences memristive characteristic General Materials Science Thin film lcsh:Microscopy lcsh:QC120-168.85 010302 applied physics lcsh:QH201-278.5 lcsh:T business.industry Sputter deposition 021001 nanoscience & nanotechnology Amorphous solid amorphous Ga-Sn-O (α-GTO) chemistry lcsh:TA1-2040 Optoelectronics lcsh:Descriptive and experimental mechanics lcsh:Electrical engineering. Electronics. Nuclear engineering Radio frequency lcsh:Engineering (General). Civil engineering (General) 0210 nano-technology business lcsh:TK1-9971 Layer (electronics) |
| Zdroj: | Materials Volume 12 Issue 19 Materials, Vol 12, Iss 19, p 3236 (2019) |
| ISSN: | 1996-1944 |
| DOI: | 10.3390/ma12193236 |
| Popis: | We have found a memristive characteristic of an amorphous Ga-Sn-O (&alpha GTO) thin-film device with double layers of different oxygen density. The double layers are deposited using radio frequency (RF) magnetron sputtering, whose gas for the lower layer contains less oxygen, whereas that for the upper layer contains more oxygen, and it is assumed that the former contains more oxygen vacancies, whereas the latter contains fewer vacancies. The characteristic is explained by drift of oxygen and is stable without forming operation because additional structures such as filament are unnecessary. The fabrication is easy because the double layers are successively deposited simply by changing the oxygen ratio in the chamber. |
| Databáze: | OpenAIRE |
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