S-Band GaN Single-Chip Front End for Active Electronically Scanned Array With 40-W Output Power and 1.75-dB Noise Figure
| Autor: | Manuela Sotgia, Walter Ciccognani, Alessandro Salvucci, Ernesto Limiti, M. Vittori, Rocco Giofre, M. Cirillo, Ferdinando Costanzo, Giorgio Polli, Sergio Colangeli |
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| Rok vydání: | 2018 |
| Předmět: |
Power-added efficiency
Radiation Materials science business.industry 020208 electrical & electronic engineering Active electronically scanned array 020206 networking & telecommunications Gallium nitride 02 engineering and technology Condensed Matter Physics Chip Noise figure Settore ING-INF/01 - Elettronica chemistry.chemical_compound chemistry 0202 electrical engineering electronic engineering information engineering Optoelectronics S band Electrical and Electronic Engineering Antenna (radio) business Monolithic microwave integrated circuit |
| Zdroj: | IEEE Transactions on Microwave Theory and Techniques. 66:5696-5707 |
| ISSN: | 1557-9670 0018-9480 |
| DOI: | 10.1109/tmtt.2018.2861716 |
| Popis: | The design, realization, and tests of an S-band gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) single-chip front end (SCFE) is presented. The MMIC, realized on the 250-nm gate length GaN process available from the united monolithic semiconductor, integrates high-power and low-noise amplification together with the transmit (Tx)-receive (Rx) switch in a $7\times 7$ mm2 chip area. The SCFE has been conceived for active electronically scanned antenna applications in S-band. In the Rx mode, noise figure (NF) lower than 1.75 dB and gain better than 30 dB have been measured. In the Tx mode, output power and power added efficiency better than 45 dBm and 42%, respectively, have been achieved, with an associated gain higher than 35 dB. Such performance has been measured over a 13% fractional bandwidth in S-band. To the best of the authors’ knowledge, this is the first GaN SCFE operating in S-band. |
| Databáze: | OpenAIRE |
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