Effects of ion damage on IBICC and SEU imaging

Autor:	Marty R. Shaneyfelt, T.L. Meisenheimer, F.W. Sexton, Barney Lee Doyle, K.M. Horn
Rok vydání:	1995
Předmět:	Nuclear and High Energy Physics Materials science business.industry Transistor Doping Electrical engineering Substrate (electronics) Microbeam Upset law.invention Ionizing radiation Ion Nuclear Energy and Engineering CMOS law Optoelectronics Electrical and Electronic Engineering business
Zdroj:	IEEE Transactions on Nuclear Science. 42:1940-1947
ISSN:	1558-1578 0018-9499
DOI:	10.1109/23.489238
Popis:	The effect of displacement and ionizing dose damage on ion-beam-induced-charge-collection (IBICC) and single-event-upset (SEU) imaging are explored. IBICC imaging is not affected by ionizing dose damage, and its dependence on displacement damage is a complex function of the structure of the samples used in this study. Degradation of the IBICC signal is controlled by displacement damage that occurs at different rates in the heavily doped substrate and lightly doped epitaxial silicon layer, leading to a non-linear dependence of inverse degradation versus ion fluence. The effect of ion exposure on the electrical performance of complementary metal-oxide-semiconductor (CMOS) static random access memories (SRAMs) is solely related to ionizing dose effects in the transistor oxides. With SEU imaging, we found that an additional region became sensitive to upset with ion fluence probably as a result of ionizing dose effects on the restoring transistors. Finally, SEU during IBICC imaging resulted in charge collection from both p-drains of a memory cell. Implications of damage on the use of these microbeam techniques are discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7851d0682ed1fd01ca22e2613a26647d https://doi.org/10.1109/23.489238 Zobrazit plný text záznamu