Low-damping ferromagnetic resonance in electron-beam patterned, high-Q vanadium tetracyanoethylene magnon cavities
Autor: | Michael E. Flatté, Denis R. Candido, Seth Kurfman, Kristen Buchanan, Michael Chilcote, Ezekiel Johnston-Halperin, Na Zhu, Hong X. Tang, Andrew Franson |
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Jazyk: | angličtina |
Rok vydání: | 2019 |
Předmět: |
Fabrication
Materials science Silicon lcsh:Biotechnology FOS: Physical sciences chemistry.chemical_element Applied Physics (physics.app-ph) 02 engineering and technology Tetracyanoethylene 01 natural sciences chemistry.chemical_compound Spin wave Ferrimagnetism lcsh:TP248.13-248.65 Mesoscale and Nanoscale Physics (cond-mat.mes-hall) 0103 physical sciences General Materials Science Thin film 010302 applied physics Magnonics Condensed matter physics Condensed Matter - Mesoscale and Nanoscale Physics business.industry Magnon General Engineering Physics - Applied Physics 021001 nanoscience & nanotechnology Ferromagnetic resonance lcsh:QC1-999 Semiconductor Magnetic Phenomena chemistry Sapphire Optoelectronics Ferrite (magnet) 0210 nano-technology business lcsh:Physics |
Zdroj: | APL Materials, Vol 7, Iss 12, Pp 121113-121113-7 (2019) |
Popis: | Integrating patterned, low-loss magnetic materials into microwave devices and circuits presents many challenges due to the specific conditions that are required to grow ferrite materials, driving the need for flip-chip and other indirect fabrication techniques. The low-loss ($\alpha = 3.98 \pm 0.22 \times 10^{-5}$), room-temperature ferrimagnetic coordination compound vanadium tetracyanoethylene ($\mathrm{V[TCNE]}_x$) is a promising new material for these applications that is potentially compatible with semiconductor processing. Here we present the deposition, patterning, and characterization of $\mathrm{V[TCNE]}_x$ thin films with lateral dimensions ranging from 1 micron to several millimeters. We employ electron-beam lithography and liftoff using an aluminum encapsulated poly(methyl methacrylate), poly(methyl methacrylate-methacrylic acid) copolymer bilayer (PMMA/P(MMA-MAA)) on sapphire and silicon. This process can be trivially extended to other common semiconductor substrates. Films patterned via this method maintain low-loss characteristics down to 25 microns with only a factor of 2 increase down to 5 microns. A rich structure of thickness and radially confined spin-wave modes reveals the quality of the patterned films. Further fitting, simulation, and analytic analysis provides an exchange stiffness, $A_{ex} = 2.2 \pm 0.5 \times 10^{-10}$ erg/cm, as well as insights into the mode character and surface spin pinning. Below a micron, the deposition is non-conformal, which leads to interesting and potentially useful changes in morphology. This work establishes the versatility of $\mathrm{V[TCNE]}_x$ for applications requiring highly coherent magnetic excitations ranging from microwave communication to quantum information. Comment: 18 pages, 7 figures, submitted to APL Materials |
Databáze: | OpenAIRE |
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