Formation of special misorientations related to transition bands in structure of deformed and annealed single crystal (110)[001] of Fe-3% Si alloy
Autor: | Mikhail L. Lobanov, A. A. Redikul’tsev, L. V. Lobanova, G. M. Rusakov |
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Rok vydání: | 2013 |
Předmět: |
MISORIENTATIONS
Materials science Silicon COMMERCIAL FE-3% SI ALLOY Annealing (metallurgy) DEFORMATION BANDS Alloy chemistry.chemical_element Transition band SILICON WAFERS engineering.material SPECIAL MISORIENTATIONS COLD DEFORMATION PRIMARY RECRYSTALLIZATION DEFORMATION Materials Chemistry Wafer SILICON TRANSITION BANDS SILICON ALLOYS FE-3%SI ALLOYS Condensed matter physics SINGLE CRYSTAL (110)[001] Recrystallization (metallurgy) SINGLE CRYSTALS Condensed Matter Physics Crystallography chemistry engineering Deformation bands DEFORMATION BAND CERIUM ALLOYS RECRYSTALLIZATION (METALLURGY) Single crystal |
Zdroj: | Physics of Metals and Metallography |
ISSN: | 1555-6190 0031-918X |
Popis: | A transition band between two deformation bands retains for the most part the orientation (110)[001] and shrinks to a thin interlayer or boundary with increasing degree of deformation. At a certain stage of deformation, the microvolumes that are arranged along the interface of the bands become adjusted to special misorientations. During primary recrystallization, cube-on-edge (Goss) grains, which grow from the transition band, have portions of special boundaries common with the deformed matrix; these boundaries were found earlier between the deformation bands. This indicates that the local domains with special misorientations formed at the stage of cold deformation transform during annealing into the corresponding primary-recrystallization nuclei. © 2013 Pleiades Publishing, Ltd. |
Databáze: | OpenAIRE |
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