Transport in tungsten-containing diamond-like films
| Autor: | S.M. Chudinov, Giorgio Mancini, V.F. Dorfman, B. Pypkin, D. Rodichev, A. Bozhko, Sergio Stizza |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Chemistry
Mechanical Engineering Analytical chemistry chemistry.chemical_element Diamond General Chemistry Electron Dielectric Chemical vapor deposition Conductivity Sputter deposition Tungsten engineering.material Electronic Optical and Magnetic Materials Electric field Materials Chemistry engineering Electrical and Electronic Engineering |
| Zdroj: | Diamond and Related Materials. 1:572-575 |
| ISSN: | 0925-9635 |
| DOI: | 10.1016/0925-9635(92)90168-n |
| Popis: | Electron transport in tungsten-containing diamond-like films (DLF) grown by combined plasma-enhanced chemical vapour deposition and magnetron sputtering was investigated. It was shown that at room temperature for dielectric films with a metal concentration of 1 × 10 16 –1 × 10 18 /cm 3 , the electron conductivity is in agreement with the Pool-Frenkel model and tends to be activationless following the Shklovskii mechanism or the Fowler-Nordheim one at low temperatures. Transition into a low-resistant state was observed, as an electric field of about E c = 1 × 10 5 V/cm was applied. As the field is more than the E c the resistance depends on neither temperature nor electric field. In the strong electric and magnetic fields the non-ohmic hopping conductivity of both Mott and Shklovskii types was observed in the DLF samples with tungsten concentration as low as 10 16 –10 18 /cm 3 . Using the experimental data the parameters of hopping conductivity theory were evaluated. The data of low-frequency capacitance measurements in insulating DLF are also presented. Possible mechanisms of obtained results are discussed. |
| Databáze: | OpenAIRE |
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