Influence of Surface Treatment and Annealing Temperature on the Recombination Processes of the Quantum Dots Solar Cells
| Autor: | Tung Ha Thanh, Vinh Lam Quang, Huynh Thanh Dat |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Passivation Article Subject business.industry Annealing (metallurgy) 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Ion Quantum dot lcsh:Technology (General) Optoelectronics lcsh:T1-995 General Materials Science 0210 nano-technology business Current density Recombination |
| Zdroj: | Journal of Nanomaterials, Vol 2016 (2016) |
| ISSN: | 1687-4110 |
| DOI: | 10.1155/2016/9806386 |
| Popis: | We have studied the effect of the surface treatment of the CdS/CdSe quantum dots (QDs) by passivation ZnS layers and annealing temperature on the recombination resistance of the quantum dots solar cells (QDSSCs) based on TiO2/CdS/CdSe/ZnS photoanodes. The recombination resistance at TiO2/QDs contact and in TiO2 film decreased when the QDs were added to the passivation ZnS layers. Furthermore, we used the F− ions linker and found the best annealing temperature conditions to reduce the recombination resistance of the QDSSCs. As a result, the current density increased from 7.85 mA/cm2 to 14 mA/cm2. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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