Physical-topology modeling of silicon/gallium arsenide Schottky transistor of submicron technology LSI
| Autor: | V. M. Lukovkin, S. P. Novosyadliy, R. Melnyk, A. V. Pavlyshyn |
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| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Silicon business.industry electronics chemistry.chemical_element modeling Condensed Matter Physics Epitaxy lcsh:QC1-999 Gallium arsenide Monocrystalline silicon chemistry.chemical_compound chemistry Electromagnetic shielding gaas Optoelectronics General Materials Science Wafer MESFET Physical and Theoretical Chemistry business lsi Schottky transistor schottky fet lcsh:Physics |
| Zdroj: | Фізика і хімія твердого тіла, Vol 21, Iss 2, Pp 361-364 (2020) |
| ISSN: | 2309-8589 1729-4428 |
| Popis: | In this paper described researched essentials and physical mechanisms of MESFET on epitaxy layers of GaAs with monocrystalline silicon wafer. Conducted computer modeling of MESFET with p-channel: distributions of potential, volumetric charge, current in channel and its characteristics. Based on conducted modeling discovered new effect in MESFET, shielding of volumetric charge, which sufficiently influences on current distribution in channel. |
| Databáze: | OpenAIRE |
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