Interference Signal Effects on a High-Frequency Monolithic Voltage-Controlled Oscillator: Experiments and Simulations
Autor: | Amable Blain, Jeremy Raoult, Sylvie Jarrix, Adrien Doridant |
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Přispěvatelé: | Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS) |
Jazyk: | angličtina |
Rok vydání: | 2014 |
Předmět: |
Engineering
business.industry Frequency band BiCMOS Condensed Matter Physics Antiresonance Atomic and Molecular Physics and Optics Electromagnetic interference [SPI.TRON]Engineering Sciences [physics]/Electronics Injection locking Voltage-controlled oscillator Interference (communication) Electronic engineering Electrical and Electronic Engineering business ComputingMilieux_MISCELLANEOUS Electronic circuit |
Zdroj: | IEEE Transactions on Electromagnetic Compatibility IEEE Transactions on Electromagnetic Compatibility, Institute of Electrical and Electronics Engineers, 2014, 56 (1), pp.51-59. ⟨10.1109/TEMC.2013.2271792⟩ |
ISSN: | 0018-9375 |
Popis: | This paper reflects a part of electromagnetic susceptibility studies conducted on active circuits. An electromagnetic interference (EMI) is injected on a 5 GHz monolithic voltage-controlled oscillator (VCO). This circuit is implemented on a 0.35 μm BiCMOS SiGe process. Injection locking and pulling are put in evidence when the circuit is subject to a high frequency interference with possible frequency band widened with respect to the oscillation frequency band of the VCO. A simulation process based on envelope-transient method is presented. Its main goal is to predict the behavior of the VCO under injection with interference signal power ranging from low to high level. |
Databáze: | OpenAIRE |
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