Stress measurements of germanium nanocrystals embedded in silicon oxide
| Autor: | Vincent Paillard, Alain Claverie, Caroline Bonafos, A. Wellner, K. H. Heinig, Bernd Schmidt, H. Coffin |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
Phonon business.industry Analytical chemistry General Physics and Astronomy chemistry.chemical_element Ge nanocrystals Germanium Stress (mechanics) stress Condensed Matter::Materials Science symbols.namesake Ion implantation chemistry Nanocrystal Transmission electron microscopy Raman spectroscopy symbols Optoelectronics Silicon oxide business |
| Zdroj: | Journal of Applied Physics, 94 (2003) 5639-5642 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.1617361 |
| Popis: | Ge nanocrystals embedded in thermal SiO2 on top of a Si substrate are investigated using Raman spectroscopy and transmission electron microscopy. We observe that the Raman peak frequency of the Ge nanocrystals is strongly affected by compressive stress. In the case of large particles for which the phonon confinement-induced Raman shift can be neglected, the stress is measured taking into account isotopic composition effects induced by the ion implantation process used to produce the nanocrystals. The stress is proposed to originate from a liquid¿solid phase transition in Ge. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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