Wear-Out Condition Monitoring of IGBT and mosfet Power Modules in Inverter Operation
| Autor: | Frede Blaabjerg, Asier Garcia-Bediaga, Manuel Arias, Fernando Gonzalez-Hernando, Francesco Iannuzzo, Jon San-Sebastian |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
condition monitoring switch power modules 02 engineering and technology 01 natural sciences Industrial and Manufacturing Engineering Automotive engineering Solder fatigue 0103 physical sciences MOSFET semiconductor device reliability Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Electrical and Electronic Engineering 010302 applied physics 020208 electrical & electronic engineering Condition monitoring Insulated-gate bipolar transistor fault diagnosis Power (physics) Control and Systems Engineering Power module Bond wire fatigue Inverter Voltage drop Voltage |
| Zdroj: | Gonzalez-Hernando, F, San-Sebastian, J, Garcia-Bediaga, A, Arias, M, Iannuzzo, F & Blaabjerg, F 2019, ' Wear-Out Condition Monitoring of IGBT and mosfet Power Modules in Inverter Operation ', I E E E Transactions on Industry Applications, vol. 55, no. 6, 8805096, pp. 6184-6192 . https://doi.org/10.1109/TIA.2019.2935985 Scopus RUO. Repositorio Institucional de la Universidad de Oviedo instname |
| Popis: | In this article, a condition monitoring system for the degradation assessment of power semiconductor modules under switching conditions is presented. The proposed monitoring system is based on the online measurement of two damage indicators: the on -state voltage of the semiconductor and the voltage drop in the bond wires. The on-state voltage of a semiconductor can be employed for temperature estimation, in order to anticipate failures in the solder joints that increase the thermal resistance of the cooling path. Moreover, by measuring the voltage drop in the bond wires, the degradation of the bond wires can be detected. The described monitoring system has been implemented in an inverter prototype, and tests have been performed in different scenarios to verify its capabilities in healthy and degraded states. Furthermore, a monitoring routine has been proposed in order to perform the required measurements in high switching frequency applications. |
| Databáze: | OpenAIRE |
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