Ultralow Leakage Current AlGaN/GaN Schottky Diodes With 3-D Anode Structure
Autor: | Elison Matioli, Bin Lu, Tomas Palacios |
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Předmět: |
Materials science
business.industry Schottky barrier Schottky diode Schottky trigate Cathode Electronic Optical and Magnetic Materials Anode law.invention GaN power electronics law MOSFET Breakdown voltage Optoelectronics transistor Electrical and Electronic Engineering business Leakage (electronics) Diode |
Popis: | We demonstrate ultralow leakage current AlGaN/GaN Schottky-barrier diodes (SBDs) based on a 3-D anode contact. In contrast to conventional AlGaN/GaN SBDs, this new device forms a Schottky contact directly to the 2-D electron gas (2-DEG) at the sidewalls of the 3-D anode structure to improve its turn-on characteristics. In addition, this device integrates an insulated trigate MOS structure to reduce its reverse-bias leakage current. By optimizing this new technology, we demonstrate SBDs with 3-D anode structures with turn-on voltage of 0.85 V, ON-resistance of 5.96 Omega mm and ideality factor of 1.27. The reverse-bias leakage current was significantly reduced by nearly four orders of magnitude, down to 260 pA/mm, with a breakdown voltage of up to 127 V for a distance of 1.5 mu m between the cathode and anode electrodes. To the best of our knowledge, this is among the lowest leakage currents reported in lateral AlGaN/GaN SBDs fabricated on silicon substrate. |
Databáze: | OpenAIRE |
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